NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices

Jean-Michel Caruge; Jonathan E Halpert; Vladimir Bulović; Moungi G Bawendi

doi:10.1021/nl0623208

NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices

Nano Lett. 2006 Dec;6(12):2991-4. doi: 10.1021/nl0623208.

Authors

Jean-Michel Caruge¹, Jonathan E Halpert, Vladimir Bulović, Moungi G Bawendi

Affiliation

¹ Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.

PMID: 17163746
DOI: 10.1021/nl0623208

Abstract

We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq3), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.