Study of the self-assembling of n-octylphosphonic acid layers on aluminum oxide

Langmuir. 2008 Dec 2;24(23):13450-6. doi: 10.1021/la801978a.

Abstract

The deposition of n-octylphosphonic acid on aluminum oxide was studied. The substrate was pretreated in order to achieve a root-mean-square roughness of <1 nm, a hydroxyl fraction of 30%, and a thickness of approximately 170 nm. It was proven using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) that, rather than a monolayer, an organic multilayer was formed. The growth mechanism was identified as a Stranski-Krastanov one. It was also shown that the use of AFM, probing the surface topography, is essential for a reliable quantification and interpretation of data obtained with XPS.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Aluminum Oxide / chemistry*
  • Membranes, Artificial*
  • Microscopy, Atomic Force
  • Organophosphonates / chemistry*
  • Particle Size
  • Spectrophotometry
  • Surface Properties
  • X-Rays

Substances

  • Membranes, Artificial
  • Organophosphonates
  • n-octylphosphonic acid
  • Aluminum Oxide