A path to ultranarrow patterns using self-assembled lithography

Nano Lett. 2010 Mar 10;10(3):1000-5. doi: 10.1021/nl904141r.

Abstract

The templated self-assembly of block copolymer (BCP) thin films can generate regular arrays of 10-50 nm scale features with good positional and orientational accuracy, but the ordering, registration and pattern transfer of sub-10-nm feature sizes is not well established. Here, we report solvent-annealing and templating methods that enable the formation of highly ordered grating patterns with a line width of 8 nm and period 17 nm from a self-assembled poly(styrene-b-dimethylsiloxane) (PS-PDMS) diblock copolymer. The BCP patterns can be registered hierarchically on a larger-period BCP pattern, which can potentially diversify the available pattern geometries and enables precise pattern registration at small feature sizes. Sub-10-nm-wide tungsten nanowires with excellent order and uniformity were fabricated from the self-assembled patterns using a reactive ion etching process.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Dimethylpolysiloxanes / chemistry*
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Nanotechnology / methods*
  • Nylons / chemistry*
  • Particle Size
  • Polystyrenes / chemistry*
  • Surface Properties
  • Tungsten / chemistry*

Substances

  • Dimethylpolysiloxanes
  • Macromolecular Substances
  • Nylons
  • Polystyrenes
  • poly(dimethylsiloxane)-polyamide copolymer
  • Tungsten