Growth of highly oriented ZnO nanowires on GaN substrates for electronic and optical sensor applications

J Nanosci Nanotechnol. 2010 Mar;10(3):1839-41. doi: 10.1166/jnn.2010.2110.

Abstract

In this Paper we present growth and characterization results of highly oriented ZnO nanowires grown on wide bandgap GaN substrates. Experimental results on the ZnO nanowires grown on p-GaN are presented with growth morphology and dimensionality control. We also present experimental results on these nanowire arrays such as I-V measurements and UV sensitivity measurements. The ZnO nanowires can be used for a variety of nanoscale optical and electronics applications.