Nanolithography of single-layer graphene oxide films by atomic force microscopy

Langmuir. 2010 May 4;26(9):6164-6. doi: 10.1021/la101077t.

Abstract

Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO(2) substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squares, triangles, and zigzags can be easily fabricated. By using the GO patterns as templates, the hybrid GO-Ag nanoparticle patterns were obtained. Our study provides a flexible, simple, convenient method for generating GO patterns on solid substrates, which could be useful for graphene material-based device applications.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Graphite / chemistry*
  • Microscopy, Atomic Force*
  • Microscopy, Electron, Scanning
  • Nanotechnology / methods*
  • Silicon / chemistry
  • Silicon Dioxide / chemistry
  • Surface Properties

Substances

  • Silicon Dioxide
  • Graphite
  • Silicon