We present a semiconductor saturable absorber mirror mode-locked thin disk laser based on Yb:Lu(2)O(3) with an average power of 141 W and an optical-to-optical efficiency of more than 40%. The ideal soliton pulses have an FWHM duration of 738 fs, an energy of 2.4 microJ, and a corresponding peak power of 2.8 MW. The repetition rate was 60 MHz and the beam was close to the diffraction limit with a measured M(2) below 1.2.