Nanometer size field effect transistors for terahertz detectors

Nanotechnology. 2013 May 31;24(21):214002. doi: 10.1088/0957-4484/24/21/214002. Epub 2013 Apr 25.

Abstract

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.
  • Review

MeSH terms

  • Equipment Design
  • Nanotechnology / instrumentation*
  • Radiometry / instrumentation*
  • Semiconductors*
  • Terahertz Imaging / instrumentation*
  • Terahertz Spectroscopy / instrumentation*
  • Transducers*
  • Transistors, Electronic*