Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Mi Jang; Ji Hoon Park; Seongil Im; Se Hyun Kim; Hoichang Yang

doi:10.1002/adma.201303388

Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Adv Mater. 2014 Jan 15;26(2):288-92. doi: 10.1002/adma.201303388. Epub 2013 Oct 8.

Authors

Mi Jang¹, Ji Hoon Park, Seongil Im, Se Hyun Kim, Hoichang Yang

Affiliation

¹ Department of Advanced Fiber Engineering, Inha University, Incheon, 402-751, Korea.

PMID: 24403114
DOI: 10.1002/adma.201303388

Abstract

Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2) ), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm(2) V(-1) s(-1) , Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

Keywords: conjugation; low-voltage operation; organic field-effect transistors; pentacene; trap; triethylsilylethynyl anthradithiophene (TES-ADT).

Publication types

Research Support, Non-U.S. Gov't