Epitaxial growth of asymmetrically-doped bilayer graphene for photocurrent generation

Abstract

An asymmetrically doped bilayer graphene is grown by modulation-doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen-doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single-crystalline bilayer graphene p-n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p-n junctions via a hot carrier-assisted mechanism.

Keywords: asymmetrically doping; bilayer graphene; epitaxial growth; p-n junction; photocurrent generation.