Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors

Pengfei Guo; Wei Hu; Qinglin Zhang; Xiujuan Zhuang; Xiaoli Zhu; Hong Zhou; Zhengping Shan; Jinyou Xu; Anlian Pan

doi:10.1002/adma.201304967

Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors

Adv Mater. 2014 May;26(18):2844-9. doi: 10.1002/adma.201304967. Epub 2014 Feb 21.

Authors

Pengfei Guo¹, Wei Hu, Qinglin Zhang, Xiujuan Zhuang, Xiaoli Zhu, Hong Zhou, Zhengping Shan, Jinyou Xu, Anlian Pan

Affiliation

¹ Key Laboratory for Micro-Nano Physics and Technology of Hunan Province and State Key Laboratory of Chemo/biosensing and Chemometrics (CBSC), Hunan University, Changsha, 410082, P.R. China.

PMID: 24677130
DOI: 10.1002/adma.201304967

Abstract

High-performance visible-light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, Ion/Ioff ratio, and external quantum efficiency, relative to devices based on single composition structures.

Keywords: high-performance; lateral heterostructure; nanoribbon; photodetector; semiconductor.

Publication types

Research Support, Non-U.S. Gov't