Investigation of optimized end-bonding magnetoelectric heterostructure for sensitive magnetic field sensor

Caijiang Lu; Changbao Xu; Lei Wang; Jipu Gao; Junguo Gui; Chenghui Lin

doi:10.1063/1.4901586

Investigation of optimized end-bonding magnetoelectric heterostructure for sensitive magnetic field sensor

Rev Sci Instrum. 2014 Nov;85(11):115003. doi: 10.1063/1.4901586.

Authors

Caijiang Lu¹, Changbao Xu¹, Lei Wang², Jipu Gao¹, Junguo Gui¹, Chenghui Lin¹

Affiliations

¹ Guizhou Electric Power Test Research Institute, China Southern Power Grid, Guiyang 550002, China.
² Nanyang Power Supply Bureau, State Grid Corporation of China, Nanyang 473000, China.

PMID: 25430140
DOI: 10.1063/1.4901586

Abstract

This paper reports an optimized end-bonding magnetoelectric (ME) heterostructure FeCuNbSiB-PZT-FeCuNbSiB (FPF) for sensitive magnetic field sensor. The heterostructure is made by attaching magnetostrictive Fe73.5Cu1Nb3Si13.5B9 (FeCuNbSiB) foils at the free ends of piezoelectric Pb(Zr1-x,Tix)O3 (PZT) plates. Due to the structural advantages, the FPF has ∼3.12 times larger resonance voltage coefficient (αME,r) than traditional FeCuNbSiB/PZT laminate. And compared with the Metglas-PZT-Metglas heterostructure, the FPF heterostructure has stronger ME responses for the excellent magnetic characteristics of FeCuNbSiB. In experiments, the FPF heterostructure is optimal designed through adjusting the thickness of PZT plate (tp) and the length of FeCuNbSiB foil (L). The results demonstrate that the maximum αME,r of 662.1 (V/cm Oe) is observed at 13 Oe DC bias magnetic field when L = 15 mm and tp = 0.6 mm. Based on the giant ME coupling, the DC magnetic field sensitivity for the optimized FPF heterostructure is 3.89 nT at resonant frequency. These results are very promising for the cheap room-temperature magnetic field sensing technology.