Growth and Etching of Monolayer Hexagonal Boron Nitride

Lifeng Wang; Bin Wu; Lili Jiang; Jisi Chen; Yongtao Li; Wei Guo; Pingan Hu; Yunqi Liu

doi:10.1002/adma.201501166

Growth and Etching of Monolayer Hexagonal Boron Nitride

Adv Mater. 2015 Sep 2;27(33):4858-64. doi: 10.1002/adma.201501166. Epub 2015 Jul 17.

Authors

Lifeng Wang^{1

2

3}, Bin Wu³, Lili Jiang³, Jisi Chen³, Yongtao Li³, Wei Guo³, Pingan Hu^{1

2}, Yunqi Liu³

Affiliations

¹ School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, P. R. China.
² Key Lab of Microsystem and Microstructure, Ministry of Education, Harbin Institute of Technology, Harbin, 150080, P. R. China.
³ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China.

PMID: 26183904
DOI: 10.1002/adma.201501166

Abstract

The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.

Keywords: chemical vapor deposition; diffusion; growth and etching; hexagonal boron nitride.