Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics

Xudong Wang; Peng Wang; Jianlu Wang; Weida Hu; Xiaohao Zhou; Nan Guo; Hai Huang; Shuo Sun; Hong Shen; Tie Lin; Minghua Tang; Lei Liao; Anquan Jiang; Jinglan Sun; Xiangjian Meng; Xiaoshuang Chen; Wei Lu; Junhao Chu

doi:10.1002/adma.201503340

Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics

Adv Mater. 2015 Nov;27(42):6575-81. doi: 10.1002/adma.201503340. Epub 2015 Sep 16.

Authors

Xudong Wang^{1

2}, Peng Wang¹, Jianlu Wang¹, Weida Hu¹, Xiaohao Zhou¹, Nan Guo¹, Hai Huang¹, Shuo Sun¹, Hong Shen¹, Tie Lin¹, Minghua Tang², Lei Liao³, Anquan Jiang⁴, Jinglan Sun¹, Xiangjian Meng¹, Xiaoshuang Chen¹, Wei Lu¹, Junhao Chu¹

Affiliations

¹ National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
² School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China.
³ Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
⁴ Department of Microelectronics, Fudan University, 220 Handan Road, Shanghai, 200433, China.

PMID: 26376198
DOI: 10.1002/adma.201503340

Abstract

A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).

Keywords: 2D materials, MoS2 transistors; ferroelectrics; photodetectors; photoresponsitivity.