Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

Sen Liu; Nianduan Lu; Xiaolong Zhao; Hui Xu; Writam Banerjee; Hangbing Lv; Shibing Long; Qingjiang Li; Qi Liu; Ming Liu

doi:10.1002/adma.201603293

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

Adv Mater. 2016 Dec;28(48):10623-10629. doi: 10.1002/adma.201603293. Epub 2016 Oct 17.

Authors

Sen Liu^{1

2

3}, Nianduan Lu^{1

3}, Xiaolong Zhao^{1

3}, Hui Xu², Writam Banerjee^{1

3}, Hangbing Lv^{1

3}, Shibing Long^{1

3}, Qingjiang Li², Qi Liu^{1

3}, Ming Liu^{1

3}

Affiliations

¹ Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
² College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.
³ Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.

PMID: 27748526
DOI: 10.1002/adma.201603293

Abstract

Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer. The graphene-based devices show high reliability and satisfying performance.

Keywords: cation-based memory; graphene; impenetrability; nanofilaments; resistive switching behavior.