Selective Etching of Silicon from Ti3 SiC2 (MAX) To Obtain 2D Titanium Carbide (MXene)

Mohamed Alhabeb; Kathleen Maleski; Tyler S Mathis; Asia Sarycheva; Christine B Hatter; Simge Uzun; Ariana Levitt; Yury Gogotsi

doi:10.1002/anie.201802232

Selective Etching of Silicon from Ti₃ SiC₂ (MAX) To Obtain 2D Titanium Carbide (MXene)

Angew Chem Int Ed Engl. 2018 May 4;57(19):5444-5448. doi: 10.1002/anie.201802232. Epub 2018 Mar 26.

Authors

Mohamed Alhabeb¹, Kathleen Maleski¹, Tyler S Mathis¹, Asia Sarycheva¹, Christine B Hatter¹, Simge Uzun¹, Ariana Levitt¹, Yury Gogotsi¹

Affiliation

¹ A.J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia, PA, 19104, USA.

PMID: 29518271
DOI: 10.1002/anie.201802232

Abstract

Until now, MXenes could only be produced from MAX phases containing aluminum, such as Ti₃ AlC₂ . Here, we report on the synthesis of Ti₃ C₂ (MXene) through selective etching of silicon from titanium silicon carbide-the most common MAX phase. Liters of colloidal solutions of delaminated Ti₃ SiC₂ -derived MXene (0.5-1.3 mg mL^-1 ) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti₃ AlC₂ . This new synthesis method greatly widens the range of precursors for MXene synthesis.

Keywords: MXenes; delamination; energy-storage materials; silicon; two-dimensional materials.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't