Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time

Jiseong Jang; Sangyeob Lee; Choong-Heui Chung

doi:10.1016/j.dib.2019.104668

Data on lateral photocurrent along a Cu(In,Ga)Se₂ thin film as a function of air exposure time

Data Brief. 2019 Oct 16:27:104668. doi: 10.1016/j.dib.2019.104668. eCollection 2019 Dec.

Authors

Jiseong Jang¹, Sangyeob Lee^{1

2}, Choong-Heui Chung^{1

2}

Affiliations

¹ Department of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
² Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.

Abstract

Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i _LP ) measurement has been used to extract depth-resolved L _c profiles, where L _c is the minority carrier collection length by diffusion. The extracted L _c depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se₂ (CIGS) thin film solar cells (Chung, 2019). During the measurement of i _LP , the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the i _LP values to properly estimate the electrical quality of CIGS thin films.

Keywords: Back-surface recombination velocity; CIGS; Lateral photocurrent; Minority carrier diffusion length; Solar cells.