Copper(I) oxide (Cu2O), which is obtained from copper(II) oxide (CuO) through a reduction process, is a p-type oxide material with a band gap of 2.1-2.4 eV. However, the switching performance of typical Cu2O thin-film transistors (TFTs) is poor because the reduction process increases the concentration of oxygen vacancies (VO), which interfere with the conduction of hole carriers. Ga with high oxygen affinity was doped in Cu2O thin films to decrease VO during the reduction process. As a result, the VO concentration of 1.56 at % for Ga-doped Cu2O (Ga:Cu2O) thin films decreased from 20.2 to 7.5% compared to pristine Cu2O thin films. Accordingly, the subthreshold swing or S-factor, on/off-current ratio (Ion/off), saturation mobility (μsat), and threshold voltage (Vth) of Ga:Cu2O TFTs were improved compared to pristine Cu2O TFTs with values of 7.72 from 12.50 V/dec, 1.22 × 104 from 2.74 × 102, 0.74 from 0.46 cm2/Vs, and -4.56 from -8.06 V, respectively. These results indicate that Ga plays an important role in improving the switching performance of p-type Cu2O TFT.
Keywords: PMOS; copper oxide; cuprous oxide; gallium; oxide semiconductor; thin-film transistors.