Adjustable magnetoresistance in semiconducting carbonized phthalonitrile resin

Chong Gao; Ming Yang; Wenhao Xie; Hang Zhang; Hongbo Gu; Ai Du; Zhong Shi; Ying Guo; Heng Zhou; Zhanhu Guo

doi:10.1039/d1cc04300e

Adjustable magnetoresistance in semiconducting carbonized phthalonitrile resin

Chem Commun (Camb). 2021 Sep 28;57(77):9894-9897. doi: 10.1039/d1cc04300e.

Authors

Chong Gao¹, Ming Yang², Wenhao Xie^{1

3}, Hang Zhang², Hongbo Gu¹, Ai Du⁴, Zhong Shi⁴, Ying Guo⁵, Heng Zhou⁵, Zhanhu Guo⁶

Affiliations

¹ Shanghai Key Lab of Chemical Assessment and Sustainability, School of Chemical Science and Engineering, Tongji University, Shanghai 200092, China. hongbogu2014@tongji.edu.cn.
² Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100049, China.
³ Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education, National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, China.
⁴ Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
⁵ Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. zhouheng@iccas.ac.cn.
⁶ Integrated Composites Lab (ICL), Department of Chemical & Biomolecular Engineering University of Tennessee, Knoxville, TN, 37966, USA. zguo10@utk.edu.

PMID: 34494043
DOI: 10.1039/d1cc04300e

Abstract

Herein, we report the first example of controllable magnetoresistance in a semiconducting carbonized phthalonitrile resin. This special phenomenon is explained using the different ratios of graphite-like (sp²) and diamond-like (sp³) bonds and localization length (a₀) as well as the density of states at the Fermi-level (N(E_F)).