Group-IIIb-transition-metal-alloyed wurtzite Group-IIIa-nitride (IIIb-IIIa-N) thin films have higher piezoelectric characteristics than binary IIIa-N for a broad range of applications in photonic, electronic, sensing, and energy harvesting systems. We perform theoretical thermodynamic analysis for the deposition and epitaxial growth of Y-alloyed GaN and AlN films by a newly introduced growth technique of hybrid chemical vapor deposition (HybCVD), which can overcome the limitations of the conventional techniques. We investigate the equilibrium vapor pressures in the source zones to determine the dominant precursors of cations for the input of the mixing zone. Then, we study the driving force for the vapor-solid phase reactions of cation precursors in the growth zone to calculate the relationship between the solid composition of YxGa1-xN and YxAl1-xN and the relative amount of input precursors (Y vs. GaCl and AlCl3) in different deposition conditions, such as temperature, V/III precursor input ratio, and H2/inert-gas mixture ratio in the carrier gas. The xY composition in YAlN changes nearly linearly with the input ratio of cation precursors regardless of the growth conditions. However, YGaN composition changes non-linearly and is also substantially affected by the conditions. The thermodynamic analysis provides insight into the chemistry involved in the epitaxial growth of IIIa-IIIb-N by the HybCVD, as well as the information for suitable growth conditions, which will guide the way for ongoing experimental efforts on the improvement of piezoelectricity of the lead-free piezoelectric materials.
Keywords: HybCVD; alloying; piezoelectric; thermodynamic calculations; thin film.