Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

Nathalie Lander Gower; Shiran Levy; Silvia Piperno; Sadhvikas J Addamane; Asaf Albo

doi:10.1038/s41598-024-68746-4

Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

Sci Rep. 2024 Jul 29;14(1):17411. doi: 10.1038/s41598-024-68746-4.

Authors

Nathalie Lander Gower^{1

2}, Shiran Levy^{1

2}, Silvia Piperno^{1

2}, Sadhvikas J Addamane³, Asaf Albo^{4

5}

Affiliations

¹ Faculty of Engineering, Bar-Ilan University, 5290002, Ramat Gan, Israel.
² The Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 5290002, Ramat Gan, Israel.
³ Center for Integrated Nanotechnologies, Sandia National Laboratories, MS 1303, Albuquerque, NM, 87185-1303, USA.
⁴ Faculty of Engineering, Bar-Ilan University, 5290002, Ramat Gan, Israel. asafalbo@gmail.com.
⁵ The Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, 5290002, Ramat Gan, Israel. asafalbo@gmail.com.

Abstract

This study conducts a comparative analysis, using non-equilibrium Green's functions (NEGF), of two state-of-the-art two-well (TW) Terahertz Quantum Cascade Lasers (THz QCLs) supporting clean 3-level systems. The devices have nearly identical parameters and the NEGF calculations with an abrupt-interface roughness height of 0.12 nm predict a maximum operating temperature (T_max) of ~ 250 K for both devices. However, experimentally, one device reaches a T_max of ~ 250 K and the other a T_max of only ~ 134 K. Both devices were fabricated and measured under identical conditions in the same laboratory, with high quality processes as verified by reference devices. The main difference between the two devices is that they were grown in different MBE reactors. Our NEGF-based analysis considered all parameters related to MBE growth, including the maximum estimated variation in aluminum content, growth rate, doping density, background doping, and abrupt-interface roughness height. From our NEGF calculations it is evident that the sole parameter to which a drastic drop in T_max could be attributed is the abrupt-interface roughness height. We can also learn from the simulations that both devices exhibit high-quality interfaces, with one having an abrupt-interface roughness height of approximately an atomic layer and the other approximately a monolayer. However, these small differences in interface sharpness are the cause of the large performance discrepancy. This underscores the sensitivity of device performance to interface roughness and emphasizes its strategic role in achieving higher operating temperatures for THz QCLs. We suggest Atom Probe Tomography (APT) as a path to analyze and measure the (graded)-interfaces roughness (IFR) parameters for THz QCLs, and subsequently as a design tool for higher performance THz QCLs, as was done for mid-IR QCLs. Our study not only addresses challenges faced by other groups in reproducing the record T_max of ~ 250 K and ~ 261 K but also proposes a systematic pathway for further improving the temperature performance of THz QCLs beyond the state-of-the-art.

Grants and funding

ISF 1755/23/Israel Science Foundation