Two-dimensional (2D) semiconducting dichalcogenides hold exceptional promise for next-generation electronic and photonic devices. Despite this potential, the pervasive presence of defects in 2D dichalcogenides results in carrier mobility and photoluminescence (PL) that fall significantly short of theoretical predictions. Although defect passivation offers a potential solution, its effects have been inconsistent. This arises from the lack of chemical understanding of the surface chemistry of the 2D material. In this work, we uncover new binding chemistry using a sequence-specific chemical passivation (SSCP) protocol based on 2-furanmethanothiol (FSH) and bis(trifluoromethane) sulfonimide lithium salt (Li-TFSI), which demonstrates a synchronized 100-fold enhancement in both carrier mobility and PL in WS2 monolayers. We propose an atomic-level synergistic defect passivation mechanism of both neutral and charged sulfur vacancies (SVs), supported by ultrafast transient absorption spectroscopy (TA), Hard X-ray photoelectron spectroscopy (HAXPES), and density functional theory (DFT) calculations. Our results establish a new semiconductor quality benchmark for 2D WS2, paving the way for the development of sustainable 2D semiconductor technologies.