The miniaturization of integrated circuits is facing an obstruction due to the escalating electrical resistivity of conventional copper interconnects. The underlying reason for this problem was unveiled by Fuchs and Sondheimer, who showed that thinner wires are more resistive because current- carrying electrons encounter the rough surfaces of the wire more frequently therein. Here, we present a generalization of the Fuchs-Sondheimer theory to Dirac and Weyl materials, which are candidates for next-generation interconnects. We predict a nonlinear longitudinal electric current originating from the combined action of the Berry curvature and nonspecular surface scattering.