Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy
Phys Rev B Condens Matter
.
1996 Mar 15;53(12):7851-7862.
doi: 10.1103/physrevb.53.7851.
Authors
J Mäkinen
,
T Laine
,
J Partanen
,
K Saarinen
,
P Hautojärvi
,
K Tappura
,
T Hakkarainen
,
H Asonen
,
M Pessa
,
JP Kauppinen
,
K Vänttinen
,
MA Paalanen
,
J Likonen
PMID:
9982235
DOI:
10.1103/physrevb.53.7851
No abstract available