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Diameter-dependent electron mobility of InAs nanowires.
Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A. Ford AC, et al. Among authors: guo j. Nano Lett. 2009 Jan;9(1):360-5. doi: 10.1021/nl803154m. Nano Lett. 2009. PMID: 19143505
Quantum confinement effects in nanoscale-thickness InAs membranes.
Takei K, Fang H, Kumar SB, Kapadia R, Gao Q, Madsen M, Kim HS, Liu CH, Chueh YL, Plis E, Krishna S, Bechtel HA, Guo J, Javey A. Takei K, et al. Among authors: guo j. Nano Lett. 2011 Nov 9;11(11):5008-12. doi: 10.1021/nl2030322. Epub 2011 Oct 21. Nano Lett. 2011. PMID: 22007924
Ballistic InAs nanowire transistors.
Chuang S, Gao Q, Kapadia R, Ford AC, Guo J, Javey A. Chuang S, et al. Among authors: guo j. Nano Lett. 2013 Feb 13;13(2):555-8. doi: 10.1021/nl3040674. Epub 2013 Jan 3. Nano Lett. 2013. PMID: 23256503
Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.
Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, Chen YZ, Chueh YL, Guo J, Javey A. Roy T, et al. Among authors: guo j. ACS Nano. 2015 Feb 24;9(2):2071-9. doi: 10.1021/nn507278b. Epub 2015 Jan 26. ACS Nano. 2015. PMID: 25598307
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