Liang B - Search Results

1

GaSb/GaAs type-II quantum dots grown by droplet epitaxy.

Liang B, Lin A, Pavarelli N, Reyner C, Tatebayashi J, Nunna K, He J, Ochalski TJ, Huyet G, Huffaker DL. Liang B, et al. Nanotechnology. 2009 Nov 11;20(45):455604. doi: 10.1088/0957-4484/20/45/455604. Epub 2009 Oct 16. Nanotechnology. 2009. PMID: 19834245

2

Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon.

Gao L, Woo RL, Liang B, Pozuelo M, Prikhodko S, Jackson M, Goel N, Hudait MK, Huffaker DL, Goorsky MS, Kodambaka S, Hicks RF. Gao L, et al. Among authors: liang b. Nano Lett. 2009 Jun;9(6):2223-8. doi: 10.1021/nl803567v. Nano Lett. 2009. PMID: 19413340

3

Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots.

Wong PS, Liang BL, Tatebayashi J, Xue L, Nuntawong N, Kutty MN, Brueck SR, Huffaker DL. Wong PS, et al. Among authors: liang bl. Nanotechnology. 2009 Jan 21;20(3):035302. doi: 10.1088/0957-4484/20/3/035302. Epub 2008 Dec 16. Nanotechnology. 2009. PMID: 19417291

4

InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties.

Liang BL, Dorogan VG, Mazur YI, Strom NW, Lee JH, Sablon KA, Wang ZhM, Salamo GJ. Liang BL, et al. J Nanosci Nanotechnol. 2009 May;9(5):3320-4. doi: 10.1166/jnn.2009.vc11. J Nanosci Nanotechnol. 2009. PMID: 19453010

5

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL. Wong PS, et al. Among authors: liang b. J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50. doi: 10.1166/jnn.2010.2025. J Nanosci Nanotechnol. 2010. PMID: 20355542

6

Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.

He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ. He J, et al. Among authors: liang bl. Nano Lett. 2010 Aug 11;10(8):3052-6. doi: 10.1021/nl102237n. Nano Lett. 2010. PMID: 20698619

7

Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.

Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL. Liang BL, et al. Nanotechnology. 2011 Feb 4;22(5):055706. doi: 10.1088/0957-4484/22/5/055706. Epub 2010 Dec 22. Nanotechnology. 2011. PMID: 21178233

8

Bottom-up photonic crystal cavities formed by patterned III-V nanopillars.

Scofield AC, Shapiro JN, Lin A, Williams AD, Wong PS, Liang BL, Huffaker DL. Scofield AC, et al. Nano Lett. 2011 Jun 8;11(6):2242-6. doi: 10.1021/nl200355d. Epub 2011 May 18. Nano Lett. 2011. PMID: 21591759

9

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.

Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL. Tatebayashi J, et al. Among authors: liang bl. Nanotechnology. 2008 Jul 23;19(29):295704. doi: 10.1088/0957-4484/19/29/295704. Epub 2008 Jun 10. Nanotechnology. 2008. PMID: 21730609

10

Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.

Wong PS, Liang BL, Dorogan VG, Albrecht AR, Tatebayashi J, He X, Nuntawong N, Mazur YI, Salamo GJ, Brueck SR, Huffaker DL. Wong PS, et al. Among authors: liang bl. Nanotechnology. 2008 Oct 29;19(43):435710. doi: 10.1088/0957-4484/19/43/435710. Epub 2008 Sep 22. Nanotechnology. 2008. PMID: 21832714

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