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Stacked Ge nanocrystals with ultrathin SiO₂ separation layers.
Zschintzsch M, von Borany J, Jeutter NM, Mücklich A. Zschintzsch M, et al. Among authors: mucklich a. Nanotechnology. 2011 Nov 18;22(46):465302. doi: 10.1088/0957-4484/22/46/465302. Epub 2011 Oct 27. Nanotechnology. 2011. PMID: 22032974
Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix.
Pinto SR, Buljan M, Marques L, Martín-Sánchez J, Conde' O, Chahboun A, Ramos AR, Barradas NP, Alves E, Bernstorff S, Grenzer J, Mücklich A, Ramos MM, Gomes MJ. Pinto SR, et al. Among authors: mucklich a. Nanotechnology. 2012 Oct 12;23(40):405605. doi: 10.1088/0957-4484/23/40/405605. Epub 2012 Sep 20. Nanotechnology. 2012. PMID: 22997179
InP nanocrystals on silicon for optoelectronic applications.
Prucnal S, Zhou S, Ou X, Reuther H, Liedke MO, Mücklich A, Helm M, Zuk J, Turek M, Pyszniak K, Skorupa W. Prucnal S, et al. Among authors: mucklich a. Nanotechnology. 2012 Dec 7;23(48):485204. doi: 10.1088/0957-4484/23/48/485204. Epub 2012 Nov 9. Nanotechnology. 2012. PMID: 23138269
n-InAs nanopyramids fully integrated into silicon.
Prucnal S, Facsko S, Baumgart C, Schmidt H, Liedke MO, Rebohle L, Shalimov A, Reuther H, Kanjilal A, Mücklich A, Helm M, Zuk J, Skorupa W. Prucnal S, et al. Among authors: mucklich a. Nano Lett. 2011 Jul 13;11(7):2814-8. doi: 10.1021/nl201178d. Epub 2011 Jun 6. Nano Lett. 2011. PMID: 21644567
12 results