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Extended defects formation in nanosecond laser-annealed ion implanted silicon.
Nano Lett. 2014;14(4):1769-75. doi: 10.1021/nl4042438. Epub 2014 Mar 13.
Nano Lett. 2014.
PMID: 24588318
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect.
Nguyen VH, Mazzamuto F, Saint-Martin J, Bournel A, Dollfus P.
Nguyen VH, et al. Among authors: mazzamuto f.
Nanotechnology. 2012 Feb 17;23(6):065201. doi: 10.1088/0957-4484/23/6/065201.
Nanotechnology. 2012.
PMID: 22249029
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