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Field-effect transistors based on few-layered α-MoTe(2).
Pradhan NR, Rhodes D, Feng S, Xin Y, Memaran S, Moon BH, Terrones H, Terrones M, Balicas L. Pradhan NR, et al. Among authors: xin y. ACS Nano. 2014 Jun 24;8(6):5911-20. doi: 10.1021/nn501013c. Epub 2014 Jun 4. ACS Nano. 2014. PMID: 24878323
High hardness in the biocompatible intermetallic compound β-Ti3Au.
Svanidze E, Besara T, Ozaydin MF, Tiwary CS, Wang JK, Radhakrishnan S, Mani S, Xin Y, Han K, Liang H, Siegrist T, Ajayan PM, Morosan E. Svanidze E, et al. Among authors: xin y. Sci Adv. 2016 Jul 20;2(7):e1600319. doi: 10.1126/sciadv.1600319. eCollection 2016 Jul. Sci Adv. 2016. PMID: 27453942 Free PMC article.
Electrochemical Doping of Halide Perovskites with Ion Intercalation.
Jiang Q, Chen M, Li J, Wang M, Zeng X, Besara T, Lu J, Xin Y, Shan X, Pan B, Wang C, Lin S, Siegrist T, Xiao Q, Yu Z. Jiang Q, et al. Among authors: xin y. ACS Nano. 2017 Jan 24;11(1):1073-1079. doi: 10.1021/acsnano.6b08004. Epub 2017 Jan 10. ACS Nano. 2017. PMID: 28056176
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors.
Pradhan NR, Garcia C, Isenberg B, Rhodes D, Feng S, Memaran S, Xin Y, McCreary A, Walker ARH, Raeliarijaona A, Terrones H, Terrones M, McGill S, Balicas L. Pradhan NR, et al. Among authors: xin y. Sci Rep. 2018 Aug 24;8(1):12745. doi: 10.1038/s41598-018-30969-7. Sci Rep. 2018. PMID: 30143693 Free PMC article.
Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor.
Shcherbakov D, Stepanov P, Memaran S, Wang Y, Xin Y, Yang J, Wei K, Baumbach R, Zheng W, Watanabe K, Taniguchi T, Bockrath M, Smirnov D, Siegrist T, Windl W, Balicas L, Lau CN. Shcherbakov D, et al. Among authors: xin y. Sci Adv. 2021 Jan 29;7(5):eabe2892. doi: 10.1126/sciadv.abe2892. Print 2021 Jan. Sci Adv. 2021. PMID: 33514554 Free PMC article.
3,558 results