Cao W - Search Results

1

Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface.

Feng W, Zheng W, Cao W, Hu P. Feng W, et al. Among authors: cao w. Adv Mater. 2014 Oct;26(38):6587-93. doi: 10.1002/adma.201402427. Epub 2014 Aug 28. Adv Mater. 2014. PMID: 25167845

2

Hierarchical Assembly of Tungsten Spheres and Epoxy Composites in Three-Dimensional Graphene Foam and Its Enhanced Acoustic Performance as a Backing Material.

Qiu Y, Liu J, Lu Y, Zhang R, Cao W, Hu P. Qiu Y, et al. Among authors: cao w. ACS Appl Mater Interfaces. 2016 Jul 20;8(28):18496-504. doi: 10.1021/acsami.6b06024. Epub 2016 Jul 8. ACS Appl Mater Interfaces. 2016. PMID: 27352024

3

In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS₂-MoSe₂ Lateral Heterostructures and Photodetector Application.

Chen X, Qiu Y, Yang H, Liu G, Zheng W, Feng W, Cao W, Hu W, Hu P. Chen X, et al. Among authors: cao w. ACS Appl Mater Interfaces. 2017 Jan 18;9(2):1684-1691. doi: 10.1021/acsami.6b13379. Epub 2017 Jan 6. ACS Appl Mater Interfaces. 2017. PMID: 28008759

4

Vertical MoSe₂-MoO _x p-n heterojunction and its application in optoelectronics.

Chen X, Liu G, Hu Y, Cao W, Hu P, Hu W. Chen X, et al. Among authors: cao w. Nanotechnology. 2018 Jan 26;29(4):045202. doi: 10.1088/1361-6528/aa9d4f. Nanotechnology. 2018. PMID: 29176065

5

Two-Dimensional van der Waals Materials with Aligned In-Plane Polarization and Large Piezoelectric Effect for Self-Powered Piezoelectric Sensors.

Dai M, Wang Z, Wang F, Qiu Y, Zhang J, Xu CY, Zhai T, Cao W, Fu Y, Jia D, Zhou Y, Hu PA. Dai M, et al. Among authors: cao w. Nano Lett. 2019 Aug 14;19(8):5410-5416. doi: 10.1021/acs.nanolett.9b01907. Epub 2019 Jul 29. Nano Lett. 2019. PMID: 31343178

6

Enhanced Piezoelectric Effect Derived from Grain Boundary in MoS₂ Monolayers.

Dai M, Zheng W, Zhang X, Wang S, Lin J, Li K, Hu Y, Sun E, Zhang J, Qiu Y, Fu Y, Cao W, Hu P. Dai M, et al. Among authors: cao w. Nano Lett. 2020 Jan 8;20(1):201-207. doi: 10.1021/acs.nanolett.9b03642. Epub 2019 Dec 23. Nano Lett. 2020. PMID: 31855438

7

Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration.

Lü W, Li C, Zheng L, Xiao J, Lin W, Li Q, Wang XR, Huang Z, Zeng S, Han K, Zhou W, Zeng K, Chen J, Ariando, Cao W, Venkatesan T. Lü W, et al. Among authors: cao w. Adv Mater. 2017 Jun;29(24). doi: 10.1002/adma.201606165. Epub 2017 Apr 25. Adv Mater. 2017. PMID: 28439926

8

Complete set of material properties of [011](c) poled 0.24Pb(In(1/2)Nb(1/2))O(3)-0.46Pb(Mg(1/3)Nb(2/3))O(3)-0.30PbTiO(3) single crystal.

Sun E, Cao W, Han P. Sun E, et al. Among authors: cao w. Mater Lett. 2011 Oct 1;65(19-20):2855-2857. doi: 10.1016/j.matlet.2011.06.013. Mater Lett. 2011. PMID: 21857760 Free PMC article.

9

Poling field versus piezoelectric property for [001] _c oriented 91%Pb(Zn_1/3Nb_2/3)O₃-9%PbTiO₃ single crystals.

Xiang Y, Zhang R, Cao W. Xiang Y, et al. Among authors: cao w. J Mater Sci. 2011 Mar;46(6):1839-1845. doi: 10.1007/s10853-010-5009-z. J Mater Sci. 2011. PMID: 25197145 Free PMC article.

10

Orientation dependence of electromechanical properties of relaxor based ferroelectric single crystals.

Xiang Y, Zhang R, Cao W. Xiang Y, et al. Among authors: cao w. J Mater Sci. 2011 Jan;46(1):63-68. doi: 10.1007/s10853-010-4804-x. J Mater Sci. 2011. PMID: 25214674 Free PMC article.

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