Ye G - Search Results

1

Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction.

Yuan H, Liu X, Afshinmanesh F, Li W, Xu G, Sun J, Lian B, Curto AG, Ye G, Hikita Y, Shen Z, Zhang SC, Chen X, Brongersma M, Hwang HY, Cui Y. Yuan H, et al. Among authors: ye g. Nat Nanotechnol. 2015 Aug;10(8):707-13. doi: 10.1038/nnano.2015.112. Epub 2015 Jun 1. Nat Nanotechnol. 2015. PMID: 26030655

2

Polarization and Thickness Dependent Absorption Properties of Black Phosphorus: New Saturable Absorber for Ultrafast Pulse Generation.

Li D, Jussila H, Karvonen L, Ye G, Lipsanen H, Chen X, Sun Z. Li D, et al. Among authors: ye g. Sci Rep. 2015 Oct 30;5:15899. doi: 10.1038/srep15899. Sci Rep. 2015. PMID: 26514090 Free PMC article.

3

Black phosphorus field-effect transistors.

Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y. Li L, et al. Nat Nanotechnol. 2014 May;9(5):372-7. doi: 10.1038/nnano.2014.35. Epub 2014 Mar 2. Nat Nanotechnol. 2014. PMID: 24584274

4

Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films.

Li L, Ye GJ, Tran V, Fei R, Chen G, Wang H, Wang J, Watanabe K, Taniguchi T, Yang L, Chen XH, Zhang Y. Li L, et al. Among authors: ye gj. Nat Nanotechnol. 2015 Jul;10(7):608-13. doi: 10.1038/nnano.2015.91. Epub 2015 May 18. Nat Nanotechnol. 2015. PMID: 25984835

5

Monolayer atomic crystal molecular superlattices.

Wang C, He Q, Halim U, Liu Y, Zhu E, Lin Z, Xiao H, Duan X, Feng Z, Cheng R, Weiss NO, Ye G, Huang YC, Wu H, Cheng HC, Shakir I, Liao L, Chen X, Goddard WA III, Huang Y, Duan X. Wang C, et al. Among authors: ye g. Nature. 2018 Mar 7;555(7695):231-236. doi: 10.1038/nature25774. Nature. 2018. PMID: 29517002

6

Quantum Hall effect in black phosphorus two-dimensional electron system.

Li L, Yang F, Ye GJ, Zhang Z, Zhu Z, Lou W, Zhou X, Li L, Watanabe K, Taniguchi T, Chang K, Wang Y, Chen XH, Zhang Y. Li L, et al. Nat Nanotechnol. 2016 Jul;11(7):593-7. doi: 10.1038/nnano.2016.42. Epub 2016 Mar 28. Nat Nanotechnol. 2016. PMID: 27018659

7

Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer.

Yan S, Huang H, Xie Z, Ye G, Li XX, Taniguchi T, Watanabe K, Han Z, Chen X, Wang J, Chen JH. Yan S, et al. Among authors: ye g. ACS Appl Mater Interfaces. 2019 Nov 13;11(45):42358-42364. doi: 10.1021/acsami.9b15457. Epub 2019 Nov 1. ACS Appl Mater Interfaces. 2019. PMID: 31633328

8

Pressure-Induced Electronic Transition in Black Phosphorus.

Xiang ZJ, Ye GJ, Shang C, Lei B, Wang NZ, Yang KS, Liu DY, Meng FB, Luo XG, Zou LJ, Sun Z, Zhang Y, Chen XH. Xiang ZJ, et al. Among authors: ye gj. Phys Rev Lett. 2015 Oct 30;115(18):186403. doi: 10.1103/PhysRevLett.115.186403. Epub 2015 Oct 28. Phys Rev Lett. 2015. PMID: 26565480

9

Direct observation of the layer-dependent electronic structure in phosphorene.

Li L, Kim J, Jin C, Ye GJ, Qiu DY, da Jornada FH, Shi Z, Chen L, Zhang Z, Yang F, Watanabe K, Taniguchi T, Ren W, Louie SG, Chen XH, Zhang Y, Wang F. Li L, et al. Among authors: ye gj. Nat Nanotechnol. 2017 Jan;12(1):21-25. doi: 10.1038/nnano.2016.171. Epub 2016 Sep 19. Nat Nanotechnol. 2017. PMID: 27643457

10

Absence of van der Waals Gap in Ternary Thorium Nitride ThNF and ThNCl.

Wang N, Ye G, Hu G, Meng F, Shang C, Shi M, Ying J, Chen X. Wang N, et al. Among authors: ye g. Inorg Chem. 2019 Aug 5;58(15):9897-9903. doi: 10.1021/acs.inorgchem.9b01050. Epub 2019 Jul 10. Inorg Chem. 2019. PMID: 31291102

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