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E center in silicon has a donor level in the band gap.
Larsen AN, Mesli A, Nielsen KB, Nielsen HK, Dobaczewski L, Adey J, Jones R, Palmer DW, Briddon PR, Oberg S. Larsen AN, et al. Among authors: mesli a. Phys Rev Lett. 2006 Sep 8;97(10):106402. doi: 10.1103/PhysRevLett.97.106402. Epub 2006 Sep 7. Phys Rev Lett. 2006. PMID: 17025833
Process-induced and gold acceptor defects in silicon.
Mesli A, Courcelle E, Zundel T, Siffert P. Mesli A, et al. Phys Rev B Condens Matter. 1987 Nov 15;36(15):8049-8062. doi: 10.1103/physrevb.36.8049. Phys Rev B Condens Matter. 1987. PMID: 9942604 No abstract available.
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