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23 results

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Page 1
Thermodynamic stability of high phosphorus concentration in silicon nanostructures.
Perego M, Seguini G, Arduca E, Frascaroli J, De Salvador D, Mastromatteo M, Carnera A, Nicotra G, Scuderi M, Spinella C, Impellizzeri G, Lenardi C, Napolitani E. Perego M, et al. Among authors: de salvador d. Nanoscale. 2015 Sep 14;7(34):14469-75. doi: 10.1039/c5nr02584b. Nanoscale. 2015. PMID: 26257012 Free article.
Synthesis and characterization of P δ-layer in SiO2 by monolayer doping.
Arduca E, Mastromatteo M, De Salvador D, Seguini G, Lenardi C, Napolitani E, Perego M. Arduca E, et al. Among authors: de salvador d. Nanotechnology. 2016 Feb 19;27(7):075606. doi: 10.1088/0957-4484/27/7/075606. Epub 2016 Jan 20. Nanotechnology. 2016. PMID: 26789694
Atomistic mechanism of boron diffusion in silicon.
De Salvador D, Napolitani E, Mirabella S, Bisognin G, Impellizzeri G, Carnera A, Priolo F. De Salvador D, et al. Phys Rev Lett. 2006 Dec 22;97(25):255902. doi: 10.1103/PhysRevLett.97.255902. Epub 2006 Dec 20. Phys Rev Lett. 2006. PMID: 17280368
Mechanism of boron diffusion in amorphous silicon.
Mirabella S, De Salvador D, Bruno E, Napolitani E, Pecora EF, Boninelli S, Priolo F. Mirabella S, et al. Among authors: de salvador d. Phys Rev Lett. 2008 Apr 18;100(15):155901. doi: 10.1103/PhysRevLett.100.155901. Epub 2008 Apr 15. Phys Rev Lett. 2008. PMID: 18518128
Effect of strain on the carrier mobility in heavily doped p-type Si.
Romano L, Piro AM, Grimaldi MG, Bisognin G, Napolitani E, De Salvador D. Romano L, et al. Among authors: de salvador d. Phys Rev Lett. 2006 Sep 29;97(13):136605. doi: 10.1103/PhysRevLett.97.136605. Epub 2006 Sep 28. Phys Rev Lett. 2006. PMID: 17026061
Room temperature migration of boron in crystalline silicon.
Napolitani E, De Salvador D, Storti R, Carnera A, Mirabella S, Priolo F. Napolitani E, et al. Among authors: de salvador d. Phys Rev Lett. 2004 Jul 30;93(5):055901. doi: 10.1103/PhysRevLett.93.055901. Epub 2004 Jul 30. Phys Rev Lett. 2004. PMID: 15323711
Monolayer doping of germanium by phosphorus-containing molecules.
Sgarbossa F, Carturan SM, De Salvador D, Rizzi GA, Napolitani E, Maggioni G, Raniero W, Napoli DR, Granozzi G, Carnera A. Sgarbossa F, et al. Among authors: de salvador d. Nanotechnology. 2018 Nov 16;29(46):465702. doi: 10.1088/1361-6528/aade30. Epub 2018 Aug 31. Nanotechnology. 2018. PMID: 30168801
Extended point defects in crystalline materials: Ge and Si.
Cowern NE, Simdyankin S, Ahn C, Bennett NS, Goss JP, Hartmann JM, Pakfar A, Hamm S, Valentin J, Napolitani E, De Salvador D, Bruno E, Mirabella S. Cowern NE, et al. Among authors: de salvador d. Phys Rev Lett. 2013 Apr 12;110(15):155501. doi: 10.1103/PhysRevLett.110.155501. Epub 2013 Apr 8. Phys Rev Lett. 2013. PMID: 25167283
Orientational Coherent Effects of High-Energy Particles in a LiNbO3 Crystal.
Bagli E, Guidi V, Mazzolari A, Bandiera L, Germogli G, Sytov AI, De Salvador D, Argiolas A, Bazzan M, Carnera A, Berra A, Bolognini D, Lietti D, Prest M, Vallazza E. Bagli E, et al. Among authors: de salvador d. Phys Rev Lett. 2015 Jul 3;115(1):015503. doi: 10.1103/PhysRevLett.115.015503. Epub 2015 Jul 2. Phys Rev Lett. 2015. PMID: 26182106
23 results