Field-effect tunneling transistor based on vertical graphene heterostructures.
Britnell L, Gorbachev RV, Jalil R, Belle BD, Schedin F, Mishchenko A, Georgiou T, Katsnelson MI, Eaves L, Morozov SV, Peres NM, Leist J, Geim AK, Novoselov KS, Ponomarenko LA.
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Science. 2012 Feb 24;335(6071):947-50. doi: 10.1126/science.1218461. Epub 2012 Feb 2.
Science. 2012.
PMID: 22300848
Free article.