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Reaction paths of phosphine dissociation on silicon (001).
Warschkow O, Curson NJ, Schofield SR, Marks NA, Wilson HF, Radny MW, Smith PV, Reusch TC, McKenzie DR, Simmons MY. Warschkow O, et al. J Chem Phys. 2016 Jan 7;144(1):014705. doi: 10.1063/1.4939124. J Chem Phys. 2016. PMID: 26747816 Free article.
Phosphine dissociation on the Si(001) surface.
Wilson HF, Warschkow O, Marks NA, Schofield SR, Curson NJ, Smith PV, Radny MW, McKenzie DR, Simmons MY. Wilson HF, et al. Among authors: warschkow o. Phys Rev Lett. 2004 Nov 26;93(22):226102. doi: 10.1103/PhysRevLett.93.226102. Epub 2004 Nov 23. Phys Rev Lett. 2004. PMID: 15601102
Single P and As dopants in the Si(001) surface.
Radny MW, Smith PV, Reusch TC, Warschkow O, Marks NA, Shi HQ, McKenzie DR, Schofield SR, Curson NJ, Simmons MY. Radny MW, et al. Among authors: warschkow o. J Chem Phys. 2007 Nov 14;127(18):184706. doi: 10.1063/1.2786991. J Chem Phys. 2007. PMID: 18020657
A comprehensive survey of M(2)AX phase elastic properties.
Cover MF, Warschkow O, Bilek MM, McKenzie DR. Cover MF, et al. Among authors: warschkow o. J Phys Condens Matter. 2009 Jul 29;21(30):305403. doi: 10.1088/0953-8984/21/30/305403. Epub 2009 Jul 8. J Phys Condens Matter. 2009. PMID: 21828551
A single-atom transistor.
Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY. Fuechsle M, et al. Among authors: warschkow o. Nat Nanotechnol. 2012 Feb 19;7(4):242-6. doi: 10.1038/nnano.2012.21. Nat Nanotechnol. 2012. PMID: 22343383
27 results