Tak YJ - Search Results

1

Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

Tak YJ, Ahn BD, Park SP, Kim SJ, Song AR, Chung KB, Kim HJ. Tak YJ, et al. Sci Rep. 2016 Feb 23;6:21869. doi: 10.1038/srep21869. Sci Rep. 2016. PMID: 26902863 Free PMC article.

2

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

Kim WG, Tak YJ, Du Ahn B, Jung TS, Chung KB, Kim HJ. Kim WG, et al. Among authors: tak yj. Sci Rep. 2016 Mar 14;6:23039. doi: 10.1038/srep23039. Sci Rep. 2016. PMID: 26972476 Free PMC article.

3

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

Lee H, Chang KS, Tak YJ, Jung TS, Park JW, Kim WG, Chung J, Jeong CB, Kim HJ. Lee H, et al. Among authors: tak yj. Sci Rep. 2016 Oct 11;6:35044. doi: 10.1038/srep35044. Sci Rep. 2016. PMID: 27725695 Free PMC article.

4

A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique.

Yoon S, Kim SJ, Tak YJ, Kim HJ. Yoon S, et al. Among authors: tak yj. Sci Rep. 2017 Feb 23;7:43216. doi: 10.1038/srep43216. Sci Rep. 2017. PMID: 28230088 Free PMC article.

5

The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films.

Kim HJ, Tak YJ, Park SP, Na JW, Kim YG, Hong S, Kim PH, Kim GT, Kim BK, Kim HJ. Kim HJ, et al. Among authors: tak yj. Sci Rep. 2017 Sep 29;7(1):12469. doi: 10.1038/s41598-017-12818-1. Sci Rep. 2017. PMID: 28963493 Free PMC article.

6

Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.

Kim YG, Tak YJ, Kim HJ, Kim WG, Yoo H, Kim HJ. Kim YG, et al. Among authors: tak yj. Sci Rep. 2018 Apr 3;8(1):5546. doi: 10.1038/s41598-018-23892-4. Sci Rep. 2018. PMID: 29615757 Free PMC article.

7

Enhanced electrical characteristics and stability via simultaneous ultraviolet and thermal treatment of passivated amorphous In-Ga-Zn-O thin-film transistors.

Tak YJ, Yoon DH, Yoon S, Choi UH, Sabri MM, Ahn BD, Kim HJ. Tak YJ, et al. ACS Appl Mater Interfaces. 2014 May 14;6(9):6399-405. doi: 10.1021/am405818x. Epub 2014 Apr 15. ACS Appl Mater Interfaces. 2014. PMID: 24694180

8

Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors.

Yoon S, Tak YJ, Yoon DH, Choi UH, Park JS, Ahn BD, Kim HJ. Yoon S, et al. Among authors: tak yj. ACS Appl Mater Interfaces. 2014 Aug 27;6(16):13496-501. doi: 10.1021/am502571w. Epub 2014 Aug 8. ACS Appl Mater Interfaces. 2014. PMID: 25078328

9

Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.

Park SP, Yoon DH, Tak YJ, Lee H, Kim HJ. Park SP, et al. Among authors: tak yj. Chem Commun (Camb). 2015 Jun 4;51(44):9173-6. doi: 10.1039/c4cc10209f. Chem Commun (Camb). 2015. PMID: 25947353

10

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

Shin KY, Tak YJ, Kim WG, Hong S, Kim HJ. Shin KY, et al. Among authors: tak yj. ACS Appl Mater Interfaces. 2017 Apr 19;9(15):13278-13285. doi: 10.1021/acsami.7b00257. Epub 2017 Apr 4. ACS Appl Mater Interfaces. 2017. PMID: 28299924

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