Cecchi S - Search Results

1

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Bragaglia V, Arciprete F, Zhang W, Mio AM, Zallo E, Perumal K, Giussani A, Cecchi S, Boschker JE, Riechert H, Privitera S, Rimini E, Mazzarello R, Calarco R. Bragaglia V, et al. Among authors: cecchi s. Sci Rep. 2016 Apr 1;6:23843. doi: 10.1038/srep23843. Sci Rep. 2016. PMID: 27033314 Free PMC article.

2

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Bragaglia V, Arciprete F, Zhang W, Mio AM, Zallo E, Perumal K, Giussani A, Cecchi S, Boschker JE, Riechert H, Privitera S, Rimini E, Mazzarello R, Calarco R. Bragaglia V, et al. Among authors: cecchi s. Sci Rep. 2016 Aug 16;6:31679. doi: 10.1038/srep31679. Sci Rep. 2016. PMID: 27527547 Free PMC article. No abstract available.

3

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Zallo E, Cecchi S, Boschker JE, Mio AM, Arciprete F, Privitera S, Calarco R. Zallo E, et al. Among authors: cecchi s. Sci Rep. 2017 May 3;7(1):1466. doi: 10.1038/s41598-017-01502-z. Sci Rep. 2017. PMID: 28469258 Free PMC article.

4

Role of interfaces on the stability and electrical properties of Ge₂Sb₂Te₅ crystalline structures.

Mio AM, Privitera SMS, Bragaglia V, Arciprete F, Cecchi S, Litrico G, Persch C, Calarco R, Rimini E. Mio AM, et al. Among authors: cecchi s. Sci Rep. 2017 Jun 1;7(1):2616. doi: 10.1038/s41598-017-02710-3. Sci Rep. 2017. PMID: 28572581 Free PMC article.

5

Ferroelectric Control of the Spin Texture in GeTe.

Rinaldi C, Varotto S, Asa M, Sławińska J, Fujii J, Vinai G, Cecchi S, Di Sante D, Calarco R, Vobornik I, Panaccione G, Picozzi S, Bertacco R. Rinaldi C, et al. Among authors: cecchi s. Nano Lett. 2018 May 9;18(5):2751-2758. doi: 10.1021/acs.nanolett.7b04829. Epub 2018 Feb 13. Nano Lett. 2018. PMID: 29380606 Free PMC article.

6

Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Zallo E, Cecchi S, Boschker JE, Mio AM, Arciprete F, Privitera S, Calarco R. Zallo E, et al. Among authors: cecchi s. Sci Rep. 2018 Mar 19;8(1):5015. doi: 10.1038/s41598-018-23156-1. Sci Rep. 2018. PMID: 29556097 Free PMC article.

7

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys.

Cecchi S, Lopez Garcia I, Mio AM, Zallo E, Abou El Kheir O, Calarco R, Bernasconi M, Nicotra G, Privitera SMS. Cecchi S, et al. Nanomaterials (Basel). 2022 Feb 14;12(4):631. doi: 10.3390/nano12040631. Nanomaterials (Basel). 2022. PMID: 35214960 Free PMC article.

8

Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)_m (Sb₂ Te₃ )_n Lamellae.

Cecchi S, Momand J, Dragoni D, Abou El Kheir O, Fagiani F, Kriegner D, Rinaldi C, Arciprete F, Holý V, Kooi BJ, Bernasconi M, Calarco R. Cecchi S, et al. Adv Sci (Weinh). 2024 Jan;11(1):e2304785. doi: 10.1002/advs.202304785. Epub 2023 Nov 21. Adv Sci (Weinh). 2024. PMID: 37988708 Free PMC article.

9

Geometry of tellurene adsorbed on the Si(111)-R30°-Sb surface from first principles calculations.

Isceri S, Dragoni D, Campi D, Cecchi S, Bernasconi M. Isceri S, et al. Among authors: cecchi s. Phys Chem Chem Phys. 2022 Aug 10;24(31):18608-18614. doi: 10.1039/d2cp01759h. Phys Chem Chem Phys. 2022. PMID: 35894698 Free article.

10

Optical spin injection and spin lifetime in Ge heterostructures.

Pezzoli F, Bottegoni F, Trivedi D, Ciccacci F, Giorgioni A, Li P, Cecchi S, Grilli E, Song Y, Guzzi M, Dery H, Isella G. Pezzoli F, et al. Among authors: cecchi s. Phys Rev Lett. 2012 Apr 13;108(15):156603. doi: 10.1103/PhysRevLett.108.156603. Epub 2012 Apr 13. Phys Rev Lett. 2012. PMID: 22587272

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