Zubair A - Search Results

1

MoS₂ Field-Effect Transistor with Sub-10 nm Channel Length.

Nourbakhsh A, Zubair A, Sajjad RN, Tavakkoli K G A, Chen W, Fang S, Ling X, Kong J, Dresselhaus MS, Kaxiras E, Berggren KK, Antoniadis D, Palacios T. Nourbakhsh A, et al. Among authors: zubair a. Nano Lett. 2016 Dec 14;16(12):7798-7806. doi: 10.1021/acs.nanolett.6b03999. Epub 2016 Nov 10. Nano Lett. 2016. PMID: 27960446

2

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application.

Nourbakhsh A, Zubair A, Dresselhaus MS, Palacios T. Nourbakhsh A, et al. Among authors: zubair a. Nano Lett. 2016 Feb 10;16(2):1359-66. doi: 10.1021/acs.nanolett.5b04791. Epub 2016 Jan 27. Nano Lett. 2016. PMID: 26784325

3

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS₂ Circuits with E-Mode FETs for Large-Area Electronics.

Yu L, El-Damak D, Radhakrishna U, Ling X, Zubair A, Lin Y, Zhang Y, Chuang MH, Lee YH, Antoniadis D, Kong J, Chandrakasan A, Palacios T. Yu L, et al. Among authors: zubair a. Nano Lett. 2016 Oct 12;16(10):6349-6356. doi: 10.1021/acs.nanolett.6b02739. Epub 2016 Sep 28. Nano Lett. 2016. PMID: 27633942

4

Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter.

Zubair A, Nourbakhsh A, Hong JY, Qi M, Song Y, Jena D, Kong J, Dresselhaus M, Palacios T. Zubair A, et al. Nano Lett. 2017 May 10;17(5):3089-3096. doi: 10.1021/acs.nanolett.7b00451. Epub 2017 Apr 24. Nano Lett. 2017. PMID: 28414241

5

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

Yu L, Zubair A, Santos EJ, Zhang X, Lin Y, Zhang Y, Palacios T. Yu L, et al. Among authors: zubair a. Nano Lett. 2015 Aug 12;15(8):4928-34. doi: 10.1021/acs.nanolett.5b00668. Epub 2015 Jul 28. Nano Lett. 2015. PMID: 26192468

6

Impact of Al₂O₃ Passivation on the Photovoltaic Performance of Vertical WSe₂ Schottky Junction Solar Cells.

McVay E, Zubair A, Lin Y, Nourbakhsh A, Palacios T. McVay E, et al. Among authors: zubair a. ACS Appl Mater Interfaces. 2020 Dec 30;12(52):57987-57995. doi: 10.1021/acsami.0c15573. Epub 2020 Dec 15. ACS Appl Mater Interfaces. 2020. PMID: 33320539

7

Subthreshold swing improvement in MoS₂ transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO₂/HfO₂ gate dielectric stack.

Nourbakhsh A, Zubair A, Joglekar S, Dresselhaus M, Palacios T. Nourbakhsh A, et al. Among authors: zubair a. Nanoscale. 2017 May 11;9(18):6122-6127. doi: 10.1039/c7nr00088j. Nanoscale. 2017. PMID: 28447680

8

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.

Zhou L, Xu K, Zubair A, Liao AD, Fang W, Ouyang F, Lee YH, Ueno K, Saito R, Palacios T, Kong J, Dresselhaus MS. Zhou L, et al. Among authors: zubair a. J Am Chem Soc. 2015 Sep 23;137(37):11892-5. doi: 10.1021/jacs.5b07452. Epub 2015 Sep 9. J Am Chem Soc. 2015. PMID: 26305492

9

Two-dimensional MoS₂-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.

Zhang X, Grajal J, Vazquez-Roy JL, Radhakrishna U, Wang X, Chern W, Zhou L, Lin Y, Shen PC, Ji X, Ling X, Zubair A, Zhang Y, Wang H, Dubey M, Kong J, Dresselhaus M, Palacios T. Zhang X, et al. Among authors: zubair a. Nature. 2019 Feb;566(7744):368-372. doi: 10.1038/s41586-019-0892-1. Epub 2019 Jan 28. Nature. 2019. PMID: 30692651

10

A Rational Strategy for Graphene Transfer on Substrates with Rough Features.

Hong JY, Shin YC, Zubair A, Mao Y, Palacios T, Dresselhaus MS, Kim SH, Kong J. Hong JY, et al. Among authors: zubair a. Adv Mater. 2016 Mar 23;28(12):2382-92. doi: 10.1002/adma.201505527. Epub 2016 Jan 25. Adv Mater. 2016. PMID: 26808866

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