Boschker JE - Search Results

1

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Zallo E, Cecchi S, Boschker JE, Mio AM, Arciprete F, Privitera S, Calarco R. Zallo E, et al. Among authors: boschker je. Sci Rep. 2017 May 3;7(1):1466. doi: 10.1038/s41598-017-01502-z. Sci Rep. 2017. PMID: 28469258 Free PMC article.

2

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Bragaglia V, Arciprete F, Zhang W, Mio AM, Zallo E, Perumal K, Giussani A, Cecchi S, Boschker JE, Riechert H, Privitera S, Rimini E, Mazzarello R, Calarco R. Bragaglia V, et al. Among authors: boschker je. Sci Rep. 2016 Apr 1;6:23843. doi: 10.1038/srep23843. Sci Rep. 2016. PMID: 27033314 Free PMC article.

3

Coincident-site lattice matching during van der Waals epitaxy.

Boschker JE, Galves LA, Flissikowski T, Lopes JM, Riechert H, Calarco R. Boschker JE, et al. Sci Rep. 2015 Dec 14;5:18079. doi: 10.1038/srep18079. Sci Rep. 2015. PMID: 26658715 Free PMC article.

4

Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Zallo E, Cecchi S, Boschker JE, Mio AM, Arciprete F, Privitera S, Calarco R. Zallo E, et al. Among authors: boschker je. Sci Rep. 2018 Mar 19;8(1):5015. doi: 10.1038/s41598-018-23156-1. Sci Rep. 2018. PMID: 29556097 Free PMC article.

5

Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys.

Bragaglia V, Holldack K, Boschker JE, Arciprete F, Zallo E, Flissikowski T, Calarco R. Bragaglia V, et al. Among authors: boschker je. Sci Rep. 2016 Jun 24;6:28560. doi: 10.1038/srep28560. Sci Rep. 2016. PMID: 27340085 Free PMC article.

6

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Bragaglia V, Arciprete F, Zhang W, Mio AM, Zallo E, Perumal K, Giussani A, Cecchi S, Boschker JE, Riechert H, Privitera S, Rimini E, Mazzarello R, Calarco R. Bragaglia V, et al. Among authors: boschker je. Sci Rep. 2016 Aug 16;6:31679. doi: 10.1038/srep31679. Sci Rep. 2016. PMID: 27527547 Free PMC article. No abstract available.

7

Electrical and optical properties of epitaxial binary and ternary GeTe-Sb₂Te₃ alloys.

Boschker JE, Lü X, Bragaglia V, Wang R, Grahn HT, Calarco R. Boschker JE, et al. Sci Rep. 2018 Apr 12;8(1):5889. doi: 10.1038/s41598-018-23221-9. Sci Rep. 2018. PMID: 29650968 Free PMC article.

8

Phonon anharmonicities and ultrafast dynamics in epitaxial Sb₂Te₃.

Bragaglia V, Ramsteiner M, Schick D, Boschker JE, Mitzner R, Calarco R, Holldack K. Bragaglia V, et al. Among authors: boschker je. Sci Rep. 2020 Jul 31;10(1):12962. doi: 10.1038/s41598-020-69663-y. Sci Rep. 2020. PMID: 32737341 Free PMC article.

9

Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate.

Boschker JE, Momand J, Bragaglia V, Wang R, Perumal K, Giussani A, Kooi BJ, Riechert H, Calarco R. Boschker JE, et al. Nano Lett. 2014 Jun 11;14(6):3534-8. doi: 10.1021/nl5011492. Epub 2014 May 13. Nano Lett. 2014. PMID: 24810315

10

Dynamic reconfiguration of van der Waals gaps within GeTe-Sb₂Te₃ based superlattices.

Momand J, Wang R, Boschker JE, Verheijen MA, Calarco R, Kooi BJ. Momand J, et al. Among authors: boschker je. Nanoscale. 2017 Jun 29;9(25):8774-8780. doi: 10.1039/c7nr01684k. Nanoscale. 2017. PMID: 28621784

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