Guo J - Search Results

1

Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device.

Tian H, Cao X, Xie Y, Yan X, Kostelec A, DiMarzio D, Chang C, Zhao LD, Wu W, Tice J, Cha JJ, Guo J, Wang H. Tian H, et al. Among authors: guo j. ACS Nano. 2017 Jul 25;11(7):7156-7163. doi: 10.1021/acsnano.7b03033. Epub 2017 Jun 28. ACS Nano. 2017. PMID: 28656774

2

A Tantalum Disulfide Charge-Density-Wave Stochastic Artificial Neuron for Emulating Neural Statistical Properties.

Liu H, Wu T, Yan X, Wu J, Wang N, Du Z, Yang H, Chen B, Zhang Z, Liu F, Wu W, Guo J, Wang H. Liu H, et al. Among authors: guo j. Nano Lett. 2021 Apr 28;21(8):3465-3472. doi: 10.1021/acs.nanolett.1c00108. Epub 2021 Apr 9. Nano Lett. 2021. PMID: 33835802

3

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, Chen YZ, Chueh YL, Guo J, Javey A. Roy T, et al. Among authors: guo j. ACS Nano. 2015 Feb 24;9(2):2071-9. doi: 10.1021/nn507278b. Epub 2015 Jan 26. ACS Nano. 2015. PMID: 25598307

4

Atomically Thin Femtojoule Memristive Device.

Zhao H, Dong Z, Tian H, DiMarzi D, Han MG, Zhang L, Yan X, Liu F, Shen L, Han SJ, Cronin S, Wu W, Tice J, Guo J, Wang H. Zhao H, et al. Among authors: guo j. Adv Mater. 2017 Dec;29(47). doi: 10.1002/adma.201703232. Epub 2017 Oct 25. Adv Mater. 2017. PMID: 29067743

5

Reconfigurable Stochastic neurons based on tin oxide/MoS₂ hetero-memristors for simulated annealing and the Boltzmann machine.

Yan X, Ma J, Wu T, Zhang A, Wu J, Chin M, Zhang Z, Dubey M, Wu W, Chen MS, Guo J, Wang H. Yan X, et al. Among authors: guo j. Nat Commun. 2021 Sep 29;12(1):5710. doi: 10.1038/s41467-021-26012-5. Nat Commun. 2021. PMID: 34588444 Free PMC article.

6

Circuit-Level Memory Technologies and Applications based on 2D Materials.

Ma J, Liu H, Yang N, Zou J, Lin S, Zhang Y, Zhang X, Guo J, Wang H. Ma J, et al. Among authors: guo j. Adv Mater. 2022 Dec;34(48):e2202371. doi: 10.1002/adma.202202371. Epub 2022 Oct 27. Adv Mater. 2022. PMID: 35607274 Review.

7

Controlling Polarity of MoTe₂ Transistors for Monolithic Complementary Logic via Schottky Contact Engineering.

Liu X, Islam A, Guo J, Feng PX. Liu X, et al. Among authors: guo j. ACS Nano. 2020 Feb 25;14(2):1457-1467. doi: 10.1021/acsnano.9b05502. Epub 2020 Feb 10. ACS Nano. 2020. PMID: 31909988

8

Quantum confinement effects in nanoscale-thickness InAs membranes.

Takei K, Fang H, Kumar SB, Kapadia R, Gao Q, Madsen M, Kim HS, Liu CH, Chueh YL, Plis E, Krishna S, Bechtel HA, Guo J, Javey A. Takei K, et al. Among authors: guo j. Nano Lett. 2011 Nov 9;11(11):5008-12. doi: 10.1021/nl2030322. Epub 2011 Oct 21. Nano Lett. 2011. PMID: 22007924

9

Strain-induced conductance modulation in graphene grain boundary.

Kumar SB, Guo J. Kumar SB, et al. Among authors: guo j. Nano Lett. 2012 Mar 14;12(3):1362-6. doi: 10.1021/nl203968j. Epub 2012 Feb 15. Nano Lett. 2012. PMID: 22324382

10

Monolayer MoS₂ Synaptic Transistors for High-Temperature Neuromorphic Applications.

Wang B, Wang X, Wang E, Li C, Peng R, Wu Y, Xin Z, Sun Y, Guo J, Fan S, Wang C, Tang J, Liu K. Wang B, et al. Among authors: guo j. Nano Lett. 2021 Dec 22;21(24):10400-10408. doi: 10.1021/acs.nanolett.1c03684. Epub 2021 Dec 6. Nano Lett. 2021. PMID: 34870433

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