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Beyond van der Waals Interaction: The Case of MoSe2 Epitaxially Grown on Few-Layer Graphene.
Dau MT, Gay M, Di Felice D, Vergnaud C, Marty A, Beigné C, Renaud G, Renault O, Mallet P, Le Quang T, Veuillen JY, Huder L, Renard VT, Chapelier C, Zamborlini G, Jugovac M, Feyer V, Dappe YJ, Pochet P, Jamet M. Dau MT, et al. Among authors: dappe yj. ACS Nano. 2018 Mar 27;12(3):2319-2331. doi: 10.1021/acsnano.7b07446. Epub 2018 Feb 6. ACS Nano. 2018. PMID: 29384649
Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide.
Pierucci D, Henck H, Ben Aziza Z, Naylor CH, Balan A, Rault JE, Silly MG, Dappe YJ, Bertran F, Le Fèvre P, Sirotti F, Johnson AT, Ouerghi A. Pierucci D, et al. Among authors: dappe yj. ACS Nano. 2017 Feb 28;11(2):1755-1761. doi: 10.1021/acsnano.6b07661. Epub 2017 Feb 6. ACS Nano. 2017. PMID: 28146631
Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities.
Dubey S, Lisi S, Nayak G, Herziger F, Nguyen VD, Le Quang T, Cherkez V, González C, Dappe YJ, Watanabe K, Taniguchi T, Magaud L, Mallet P, Veuillen JY, Arenal R, Marty L, Renard J, Bendiab N, Coraux J, Bouchiat V. Dubey S, et al. Among authors: dappe yj. ACS Nano. 2017 Nov 28;11(11):11206-11216. doi: 10.1021/acsnano.7b05520. Epub 2017 Oct 18. ACS Nano. 2017. PMID: 28992415
Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities.
Dubey S, Lisi S, Nayak G, Herziger F, Nguyen VD, Le Quang T, Cherkez V, González C, Dappe YJ, Watanabe K, Taniguchi T, Magaud L, Mallet P, Veuillen JY, Arenal R, Marty L, Renard J, Bendiab N, Coraux J, Bouchiat V. Dubey S, et al. Among authors: dappe yj. ACS Nano. 2018 Oct 23;12(10):10565-10566. doi: 10.1021/acsnano.8b07086. Epub 2018 Sep 20. ACS Nano. 2018. PMID: 30234967 No abstract available.
Electronic Band Structure of Ultimately Thin Silicon Oxide on Ru(0001).
Kremer G, Alvarez Quiceno JC, Lisi S, Pierron T, González C, Sicot M, Kierren B, Malterre D, Rault JE, Le Fèvre P, Bertran F, Dappe YJ, Coraux J, Pochet P, Fagot-Revurat Y. Kremer G, et al. Among authors: dappe yj. ACS Nano. 2019 Apr 23;13(4):4720-4730. doi: 10.1021/acsnano.9b01028. Epub 2019 Apr 1. ACS Nano. 2019. PMID: 30916924
Charge transfers and charged defects in WSe2/graphene-SiC interfaces.
Dappe YJ, Almadori Y, Dau MT, Vergnaud C, Jamet M, Paillet C, Journot T, Hyot B, Pochet P, Grévin B. Dappe YJ, et al. Nanotechnology. 2020 Apr 3;31(25):255709. doi: 10.1088/1361-6528/ab8083. Epub 2020 Mar 17. Nanotechnology. 2020. PMID: 32182596
65 results