Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors.
Chen C, Yang BR, Li G, Zhou H, Huang B, Wu Q, Zhan R, Noh YY, Minari T, Zhang S, Deng S, Sirringhaus H, Liu C.
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Adv Sci (Weinh). 2019 Jan 25;6(7):1801189. doi: 10.1002/advs.201801189. eCollection 2019 Apr 3.
Adv Sci (Weinh). 2019.
PMID: 30989018
Free PMC article.