Sun M - Search Results

1

Design and understanding of core/branch-structured VS₂ nanosheets@CNTs as high-performance anode materials for lithium-ion batteries.

Li X, Fu J, Sun Y, Sun M, Cheng S, Chen K, Yang X, Lou Q, Xu T, Shang Y, Xu J, Chen Q, Shan C. Li X, et al. Among authors: sun m, sun y. Nanoscale. 2019 Jul 28;11(28):13343-13353. doi: 10.1039/c9nr03581h. Epub 2019 Jul 4. Nanoscale. 2019. PMID: 31271407

2

Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics.

Xue Z, Sun M, Dong T, Tang Z, Zhao Y, Wang J, Wei X, Yu L, Chen Q, Xu J, Shi Y, Chen K, Roca I Cabarrocas P. Xue Z, et al. Among authors: sun m. Nano Lett. 2017 Dec 13;17(12):7638-7646. doi: 10.1021/acs.nanolett.7b03658. Epub 2017 Dec 4. Nano Lett. 2017. PMID: 29189013

3

1D Piezoelectric Material Based Nanogenerators: Methods, Materials and Property Optimization.

Li X, Sun M, Wei X, Shan C, Chen Q. Li X, et al. Among authors: sun m. Nanomaterials (Basel). 2018 Mar 23;8(4):188. doi: 10.3390/nano8040188. Nanomaterials (Basel). 2018. PMID: 29570639 Free PMC article. Review.

4

Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y₂O₃/HfO₂ layers.

Li T , Shen R , Sun M , Pan D , Zhang J , Xu J , Zhao J , Chen Q . Li T , et al. Among authors: sun m. Nanoscale. 2018 Oct 21;10(39):18492-18501. doi: 10.1039/c8nr05680c. Epub 2018 Aug 22. Nanoscale. 2018. PMID: 30132773

5

Constant-rate dissolution of InAs nanowires in radiolytic water observed by in situ liquid cell TEM.

Sun M , Li X , Tang Z , Wei X , Chen Q . Sun M , et al. Nanoscale. 2018 Nov 1;10(42):19733-19741. doi: 10.1039/c8nr04096f. Nanoscale. 2018. PMID: 30198038

6

UV-SWIR broad range photodetectors made from few-layer α-In₂Se₃ nanosheets.

Tang B, Hou L, Sun M, Lv F, Liao J, Ji W, Chen Q. Tang B, et al. Among authors: sun m. Nanoscale. 2019 Jul 11;11(27):12817-12828. doi: 10.1039/c9nr03077h. Nanoscale. 2019. PMID: 31180398

7

Vis-IR Wide-Spectrum Photodetector at Room Temperature Based on p-n Junction-Type GaAs_1-xSb_x/InAs Core-Shell Nanowire.

Wang X, Pan D, Han Y, Sun M, Zhao J, Chen Q. Wang X, et al. Among authors: sun m. ACS Appl Mater Interfaces. 2019 Oct 23;11(42):38973-38981. doi: 10.1021/acsami.9b13559. Epub 2019 Oct 14. ACS Appl Mater Interfaces. 2019. PMID: 31576737

8

Controlling the Facet of ZnO during Wet Chemical Etching Its (000

\bar{1}

) O-Terminated Surface.

Sun M, Yu B, Hong M, Li Z, Lyu F, Li X, Li Z, Wei X, Zhang Z, Zhang Y, Chen Q. Sun M, et al. Small. 2020 Apr;16(14):e1906435. doi: 10.1002/smll.201906435. Epub 2020 Feb 28. Small. 2020. PMID: 32108429

9

Thickness-dependent band gap of α-In₂Se₃: from electron energy loss spectroscopy to density functional theory calculations.

Lyu F, Sun Y, Yang Q, Tang B, Li M, Li Z, Sun M, Gao P, Ye LH, Chen Q. Lyu F, et al. Among authors: sun m, sun y. Nanotechnology. 2020 Jul 31;31(31):315711. doi: 10.1088/1361-6528/ab8998. Epub 2020 Apr 15. Nanotechnology. 2020. PMID: 32294630

10

The studies on wet chemical etching via in situ liquid cell TEM.

Sun M, Tian J, Chen Q. Sun M, et al. Ultramicroscopy. 2021 Dec;231:113271. doi: 10.1016/j.ultramic.2021.113271. Epub 2021 Apr 6. Ultramicroscopy. 2021. PMID: 33879369 Review.

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