Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se.
Chen C, Wang M, Wu J, Fu H, Yang H, Tian Z, Tu T, Peng H, Sun Y, Xu X, Jiang J, Schröter NBM, Li Y, Pei D, Liu S, Ekahana SA, Yuan H, Xue J, Li G, Jia J, Liu Z, Yan B, Peng H, Chen Y.
Chen C, et al. Among authors: yuan h.
Sci Adv. 2018 Sep 14;4(9):eaat8355. doi: 10.1126/sciadv.aat8355. eCollection 2018 Sep.
Sci Adv. 2018.
PMID: 30225369
Free PMC article.