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High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance.
Das P , Nash J , Webb M , Burns R , Mapara VN , Ghimire G , Rosenmann D , Divan R , Karaiskaj D , McGill SA , Sumant AV , Dai Q , Ray PC , Tawade B , Raghavan D , Karim A , Pradhan NR . Das P , et al. Among authors: rosenmann d. Nanoscale. 2020 Nov 26;12(45):22904-22916. doi: 10.1039/d0nr07311c. Nanoscale. 2020. PMID: 33185228
Silicon compatible Sn-based resistive switching memory.
Sonde S , Chakrabarti B , Liu Y , Sasikumar K , Lin J , Stan L , Divan R , Ocola LE , Rosenmann D , Choudhury P , Ni K , Sankaranarayanan SKRS , Datta S , Guha S . Sonde S , et al. Among authors: rosenmann d. Nanoscale. 2018 May 24;10(20):9441-9449. doi: 10.1039/c8nr01540f. Nanoscale. 2018. PMID: 29663006
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis.
Chakrabarti B, Chan H, Alam K, Koneru A, Gage TE, Ocola LE, Divan R, Rosenmann D, Khanna A, Grisafe B, Sanders T, Datta S, Arslan I, Sankaranarayan SKRS, Guha S. Chakrabarti B, et al. Among authors: rosenmann d. ACS Nano. 2021 Mar 23;15(3):4155-4164. doi: 10.1021/acsnano.0c03201. Epub 2021 Mar 1. ACS Nano. 2021. PMID: 33646747
90 results