Iannaccone G - Search Results

1

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper.

Conti S, Pimpolari L, Calabrese G, Worsley R, Majee S, Polyushkin DK, Paur M, Pace S, Keum DH, Fabbri F, Iannaccone G, Macucci M, Coletti C, Mueller T, Casiraghi C, Fiori G. Conti S, et al. Among authors: iannaccone g. Nat Commun. 2020 Jul 16;11(1):3566. doi: 10.1038/s41467-020-17297-z. Nat Commun. 2020. PMID: 32678084 Free PMC article.

2

Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistors.

Fiori G, Betti A, Bruzzone S, Iannaccone G. Fiori G, et al. Among authors: iannaccone g. ACS Nano. 2012 Mar 27;6(3):2642-8. doi: 10.1021/nn300019b. Epub 2012 Mar 2. ACS Nano. 2012. PMID: 22372431

3

Heterojunction hybrid devices from vapor phase grown MoS2.

Yim C, O'Brien M, McEvoy N, Riazimehr S, Schäfer-Eberwein H, Bablich A, Pawar R, Iannaccone G, Downing C, Fiori G, Lemme MC, Duesberg GS. Yim C, et al. Among authors: iannaccone g. Sci Rep. 2014 Jun 26;4:5458. doi: 10.1038/srep05458. Sci Rep. 2014. PMID: 24975741 Free PMC article.

4

Electronics based on two-dimensional materials.

Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L. Fiori G, et al. Among authors: iannaccone g. Nat Nanotechnol. 2014 Oct;9(10):768-79. doi: 10.1038/nnano.2014.207. Nat Nanotechnol. 2014. PMID: 25286272

5

Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices.

Logoteta D, Fiori G, Iannaccone G. Logoteta D, et al. Among authors: iannaccone g. Sci Rep. 2014 Oct 20;4:6607. doi: 10.1038/srep06607. Sci Rep. 2014. PMID: 25328156 Free PMC article.

6

Vertical transport in graphene-hexagonal boron nitride heterostructure devices.

Bruzzone S, Logoteta D, Fiori G, Iannaccone G. Bruzzone S, et al. Among authors: iannaccone g. Sci Rep. 2015 Sep 29;5:14519. doi: 10.1038/srep14519. Sci Rep. 2015. PMID: 26415656 Free PMC article.

7

Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.

Katagiri Y, Nakamura T, Ishii A, Ohata C, Hasegawa M, Katsumoto S, Cusati T, Fortunelli A, Iannaccone G, Fiori G, Roche S, Haruyama J. Katagiri Y, et al. Among authors: iannaccone g. Nano Lett. 2016 Jun 8;16(6):3788-94. doi: 10.1021/acs.nanolett.6b01186. Epub 2016 May 9. Nano Lett. 2016. PMID: 27152475

8

Performance of arsenene and antimonene double-gate MOSFETs from first principles.

Pizzi G, Gibertini M, Dib E, Marzari N, Iannaccone G, Fiori G. Pizzi G, et al. Among authors: iannaccone g. Nat Commun. 2016 Aug 25;7:12585. doi: 10.1038/ncomms12585. Nat Commun. 2016. PMID: 27557562 Free PMC article.

9

Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures.

McManus D, Vranic S, Withers F, Sanchez-Romaguera V, Macucci M, Yang H, Sorrentino R, Parvez K, Son SK, Iannaccone G, Kostarelos K, Fiori G, Casiraghi C. McManus D, et al. Among authors: iannaccone g. Nat Nanotechnol. 2017 May;12(4):343-350. doi: 10.1038/nnano.2016.281. Epub 2017 Jan 30. Nat Nanotechnol. 2017. PMID: 28135260

10

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes.

Agarwal TK, Soree B, Radu I, Raghavan P, Iannaccone G, Fiori G, Dehaene W, Heyns M. Agarwal TK, et al. Among authors: iannaccone g. Sci Rep. 2017 Jul 10;7(1):5016. doi: 10.1038/s41598-017-04055-3. Sci Rep. 2017. PMID: 28694459 Free PMC article.

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