Liu H - Search Results

1

Ge N-Channel MOSFETs with ZrO₂ Dielectric Achieving Improved Mobility.

Chou L, Liu Y, Xu Y, Peng Y, Liu H, Yu X, Han G, Hao Y. Chou L, et al. Among authors: liu y, liu h. Nanoscale Res Lett. 2021 Aug 4;16(1):125. doi: 10.1186/s11671-021-03577-0. Nanoscale Res Lett. 2021. PMID: 34347193 Free PMC article.

2

A micro-force sensor with slotted-quad-beam structure for measuring the friction in MEMS bearings.

Liu H, Yang S, Zhao Y, Jiang Z, Liu Y, Tian B. Liu H, et al. Among authors: liu y. Sensors (Basel). 2013 Sep 30;13(10):13178-91. doi: 10.3390/s131013178. Sensors (Basel). 2013. PMID: 24084112 Free PMC article.

3

Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment.

Zhang Y, Han G, Wu H, Wang X, Liu Y, Zhang J, Liu H, Zheng H, Chen X, Liu C, Hao Y. Zhang Y, et al. Among authors: liu y, liu h, liu c. Nanoscale Res Lett. 2018 Aug 15;13(1):237. doi: 10.1186/s11671-018-2650-y. Nanoscale Res Lett. 2018. PMID: 30112730 Free PMC article.

4

A Micro-Force Sensor with Beam-Membrane Structure for Measurement of Friction Torque in Rotating MEMS Machines.

Liu H, Yu Z, Liu Y, Fang X. Liu H, et al. Among authors: liu y. Micromachines (Basel). 2017 Oct 12;8(10):304. doi: 10.3390/mi8100304. Micromachines (Basel). 2017. PMID: 30400495 Free PMC article.

5

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation.

Liu H, Han G, Liu Y, Tang X, Yang J, Hao Y. Liu H, et al. Among authors: liu y. Nanoscale Res Lett. 2019 Jan 8;14(1):15. doi: 10.1186/s11671-018-2847-0. Nanoscale Res Lett. 2019. PMID: 30623254 Free PMC article.

6

Ge pMOSFETs with GeO_x Passivation Formed by Ozone and Plasma Post Oxidation.

Xu Y, Han G, Liu H, Wang Y, Liu Y, Ao J, Hao Y. Xu Y, et al. Among authors: liu y, liu h. Nanoscale Res Lett. 2019 Apr 5;14(1):126. doi: 10.1186/s11671-019-2958-2. Nanoscale Res Lett. 2019. PMID: 30953229 Free PMC article.

7

High Mobility Ge pMOSFETs with ZrO₂ Dielectric: Impacts of Post Annealing.

Liu H, Han G, Liu Y, Hao Y. Liu H, et al. Among authors: liu y. Nanoscale Res Lett. 2019 Jun 11;14(1):202. doi: 10.1186/s11671-019-3037-4. Nanoscale Res Lett. 2019. PMID: 31187310 Free PMC article.

8

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga₂O₃ Photodetector on Sapphire.

Hu H, Liu Y, Han G, Fang C, Zhang Y, Liu H, Wang Y, Liu Y, Ye J, Hao Y. Hu H, et al. Among authors: liu y, liu h. Nanoscale Res Lett. 2020 May 7;15(1):100. doi: 10.1186/s11671-020-03324-x. Nanoscale Res Lett. 2020. PMID: 32382779 Free PMC article.

9

ZrO₂ Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles.

Liu H, Peng Y, Han G, Liu Y, Zhong N, Duan C, Hao Y. Liu H, et al. Among authors: liu y. Nanoscale Res Lett. 2020 May 24;15(1):120. doi: 10.1186/s11671-020-03353-6. Nanoscale Res Lett. 2020. PMID: 32449145 Free PMC article.

10

ZrO_x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior.

Zhang S, Liu H, Zhou J, Liu Y, Han G, Hao Y. Zhang S, et al. Among authors: liu y, liu h. Nanoscale Res Lett. 2021 Feb 2;16(1):21. doi: 10.1186/s11671-020-03468-w. Nanoscale Res Lett. 2021. PMID: 33532927 Free PMC article.

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