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Effects of High-Temperature Treatments in Inert Atmosphere on 4H-SiC Substrates and Epitaxial Layers.
Materials (Basel). 2024 Nov 25;17(23):5761. doi: 10.3390/ma17235761.
Materials (Basel). 2024.
PMID: 39685198
Free PMC article.
Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers.
Pirnaci MD, Spitaleri L, Tenaglia D, Perricelli F, Fragalà ME, Bongiorno C, Gulino A.
Pirnaci MD, et al.
ACS Omega. 2021 Jul 28;6(31):20667-20675. doi: 10.1021/acsomega.1c02905. eCollection 2021 Aug 10.
ACS Omega. 2021.
PMID: 34396012
Free PMC article.
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