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Electronic structure of the silicon vacancy color center in diamond.
Hepp C, Müller T, Waselowski V, Becker JN, Pingault B, Sternschulte H, Steinmüller-Nethl D, Gali A, Maze JR, Atatüre M, Becher C. Hepp C, et al. Among authors: gali a. Phys Rev Lett. 2014 Jan 24;112(3):036405. doi: 10.1103/PhysRevLett.112.036405. Epub 2014 Jan 24. Phys Rev Lett. 2014. PMID: 24484153 Free article.
Protecting a Diamond Quantum Memory by Charge State Control.
Pfender M, Aslam N, Simon P, Antonov D, Thiering G, Burk S, Fávaro de Oliveira F, Denisenko A, Fedder H, Meijer J, Garrido JA, Gali A, Teraji T, Isoya J, Doherty MW, Alkauskas A, Gallo A, Grüneis A, Neumann P, Wrachtrup J. Pfender M, et al. Among authors: gali a. Nano Lett. 2017 Oct 11;17(10):5931-5937. doi: 10.1021/acs.nanolett.7b01796. Epub 2017 Sep 11. Nano Lett. 2017. PMID: 28872881
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.
Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Son NT, Maze JR, Ohshima T, Soykal ÖO, Gali Á, Lee SY, Kaiser F, Wrachtrup J. Nagy R, et al. Among authors: gali a. Nat Commun. 2019 Apr 26;10(1):1954. doi: 10.1038/s41467-019-09873-9. Nat Commun. 2019. PMID: 31028260 Free PMC article.
Electrically driven optical interferometry with spins in silicon carbide.
Miao KC, Bourassa A, Anderson CP, Whiteley SJ, Crook AL, Bayliss SL, Wolfowicz G, Thiering G, Udvarhelyi P, Ivády V, Abe H, Ohshima T, Gali Á, Awschalom DD. Miao KC, et al. Among authors: gali a. Sci Adv. 2019 Nov 22;5(11):eaay0527. doi: 10.1126/sciadv.aay0527. eCollection 2019 Nov. Sci Adv. 2019. PMID: 31803839 Free PMC article.
Room-Temperature Defect Qubits in Ultrasmall Nanocrystals.
Beke D, Valenta J, Károlyházy G, Lenk S, Czigány Z, Márkus BG, Kamarás K, Simon F, Gali A. Beke D, et al. Among authors: gali a. J Phys Chem Lett. 2020 Mar 5;11(5):1675-1681. doi: 10.1021/acs.jpclett.0c00052. Epub 2020 Feb 14. J Phys Chem Lett. 2020. PMID: 32040330 Free PMC article.
136 results