Lepsa M - Search Results

1

Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy.

Fricker D, Atkinson P, Jin X, Lepsa M, Zeng Z, Kovács A, Kibkalo L, Dunin-Borkowski RE, Kardynał BE. Fricker D, et al. Among authors: lepsa m. Nanotechnology. 2023 Jan 23;34(14). doi: 10.1088/1361-6528/acabd1. Nanotechnology. 2023. PMID: 36595322

2

Self-catalyzed VLS grown InAs nanowires with twinning superlattices.

Grap T, Rieger T, Blömers Ch, Schäpers T, Grützmacher D, Lepsa MI. Grap T, et al. Among authors: lepsa mi. Nanotechnology. 2013 Aug 23;24(33):335601. doi: 10.1088/0957-4484/24/33/335601. Epub 2013 Jul 23. Nanotechnology. 2013. PMID: 23881182

3

Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires.

Blömers C, Rieger T, Grap T, Raux M, Lepsa MI, Lüth H, Grützmacher D, Schäpers T. Blömers C, et al. Among authors: lepsa mi. Nanotechnology. 2013 Aug 16;24(32):325201. doi: 10.1088/0957-4484/24/32/325201. Epub 2013 Jul 17. Nanotechnology. 2013. PMID: 23863215

4

Converting single photons from an InAs/GaAs quantum dot into the ultraviolet: preservation of second-order correlations.

Hamer A, Fricker D, Hohn M, Atkinson P, Lepsa M, Linden S, Vewinger F, Kardynal B, Stellmer S. Hamer A, et al. Among authors: lepsa m. Opt Lett. 2022 Apr 1;47(7):1778-1781. doi: 10.1364/OL.451975. Opt Lett. 2022. PMID: 35363733

5

Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires.

Blömers C, Rieger T, Zellekens P, Haas F, Lepsa MI, Hardtdegen H, Gül O, Demarina N, Grützmacher D, Lüth H, Schäpers T. Blömers C, et al. Among authors: lepsa mi. Nanotechnology. 2013 Jan 25;24(3):035203. doi: 10.1088/0957-4484/24/3/035203. Epub 2012 Dec 21. Nanotechnology. 2013. PMID: 23263179

6

Crystallization of HfO2 in InAs/HfO2 core-shell nanowires.

Rieger T, Jörres T, Vogel J, Biermanns A, Pietsch U, Grützmacher D, Lepsa MI. Rieger T, et al. Among authors: lepsa mi. Nanotechnology. 2014 Oct 10;25(40):405701. doi: 10.1088/0957-4484/25/40/405701. Epub 2014 Sep 11. Nanotechnology. 2014. PMID: 25211286

7

Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors.

Wensorra J, Lepsa MI, Trellenkamp S, Moers J, Indlekofer KM, Lüth H. Wensorra J, et al. Among authors: lepsa mi. Nanotechnology. 2009 Nov 18;20(46):465402. doi: 10.1088/0957-4484/20/46/465402. Epub 2009 Oct 21. Nanotechnology. 2009. PMID: 19844000

8

Anisotropic phase coherence in GaAs/InAs core/shell nanowires.

Haas F, Zellekens P, Wenz T, Demarina N, Rieger T, Lepsa MI, Grützmacher D, Lüth H, Schäpers T. Haas F, et al. Among authors: lepsa mi. Nanotechnology. 2017 Nov 3;28(44):445202. doi: 10.1088/1361-6528/aa887d. Epub 2017 Aug 25. Nanotechnology. 2017. PMID: 28840851

9

Simultaneous integration of different nanowires on single textured Si (100) substrates.

Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI. Rieger T, et al. Nano Lett. 2015 Mar 11;15(3):1979-86. doi: 10.1021/nl504854v. Epub 2015 Feb 9. Nano Lett. 2015. PMID: 25650521

10

Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.

Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI. Rieger T, et al. Among authors: lepsa mi. Nano Lett. 2012 Nov 14;12(11):5559-64. doi: 10.1021/nl302502b. Epub 2012 Oct 12. Nano Lett. 2012. PMID: 23030380

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