Kar GS - Search Results

1

Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current.

Kateel V, Krizakova V, Rao S, Cai K, Gupta M, Monteiro MG, Yasin F, Sorée B, De Boeck J, Couet S, Gambardella P, Kar GS, Garello K. Kateel V, et al. Among authors: kar gs. Nano Lett. 2023 Jun 28;23(12):5482-5489. doi: 10.1021/acs.nanolett.3c00639. Epub 2023 Jun 9. Nano Lett. 2023. PMID: 37295781 Free PMC article.

2

Two-dimensional materials prospects for non-volatile spintronic memories.

Yang H, Valenzuela SO, Chshiev M, Couet S, Dieny B, Dlubak B, Fert A, Garello K, Jamet M, Jeong DE, Lee K, Lee T, Martin MB, Kar GS, Sénéor P, Shin HJ, Roche S. Yang H, et al. Among authors: kar gs. Nature. 2022 Jun;606(7915):663-673. doi: 10.1038/s41586-022-04768-0. Epub 2022 Jun 22. Nature. 2022. PMID: 35732761 Review.

3

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions.

Vudya Sethu KK, Yasin F, Swerts J, Sorée B, De Boeck J, Kar GS, Garello K, Couet S. Vudya Sethu KK, et al. Among authors: kar gs. ACS Nano. 2024 May 28;18(21):13506-13516. doi: 10.1021/acsnano.3c11289. Epub 2024 May 15. ACS Nano. 2024. PMID: 38748456

4

Direct Assessment of Defective Regions in Monolayer MoS₂ Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements.

Minj A, Mootheri V, Banerjee S, Nalin Mehta A, Serron J, Hantschel T, Asselberghs I, Goux L, Kar GS, Heyns M, Lin DHC. Minj A, et al. Among authors: kar gs. ACS Nano. 2024 Apr 16;18(15):10653-10666. doi: 10.1021/acsnano.4c03080. Epub 2024 Apr 1. ACS Nano. 2024. PMID: 38556983

5

Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)₂/Al₂O₃ Filamentary Switching Devices.

Ahmad T, Devulder W, Opsomer K, Minjauw M, Celano U, Hantschel T, Vandervorst W, Goux L, Kar GS, Detavernier C. Ahmad T, et al. Among authors: kar gs. ACS Appl Mater Interfaces. 2018 May 2;10(17):14835-14842. doi: 10.1021/acsami.7b18228. Epub 2018 Apr 19. ACS Appl Mater Interfaces. 2018. PMID: 29652471

6

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression.

Kim D, Kim JH, Choi WS, Yang TJ, Jang JT, Belmonte A, Rassoul N, Subhechha S, Delhougne R, Kar GS, Lee W, Cho MH, Ha D, Kim DH. Kim D, et al. Among authors: kar gs. Sci Rep. 2022 Nov 12;12(1):19380. doi: 10.1038/s41598-022-23951-x. Sci Rep. 2022. PMID: 36371536 Free PMC article.

7

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility.

Kwon DS, Bizindavyi J, De G, Belmonte A, Delabie A, Nyns L, Kar GS, Van Houdt J, Popovici MI. Kwon DS, et al. Among authors: kar gs. ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41704-41715. doi: 10.1021/acsami.4c08988. Epub 2024 Jul 26. ACS Appl Mater Interfaces. 2024. PMID: 39056583

8

Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs.

Panarella L, Tyaginov S, Kaczer B, Smets Q, Verreck D, Makarov A, Schram T, Lin D, Lockhart de la Rosa CJ, Kar GS, Afanas'ev V. Panarella L, et al. Among authors: kar gs. ACS Appl Mater Interfaces. 2024 Nov 13;16(45):62314-62325. doi: 10.1021/acsami.4c10888. Epub 2024 Oct 28. ACS Appl Mater Interfaces. 2024. PMID: 39465649

9

Significant Oxygen Underestimation When Quantifying Barium-Doped SrTiO Layers by Atom Probe Tomography.

Morris RJH, Lin JR, Scheerder JE, Popovici MI, Meersschaut J, Goux L, Kar GS, van der Heide P, Fleischmann C. Morris RJH, et al. Among authors: kar gs. Microsc Microanal. 2024 Mar 7;30(1):49-58. doi: 10.1093/micmic/ozad144. Microsc Microanal. 2024. PMID: 38232229

10

Key material parameters driving CBRAM device performances.

Goux L, Radhakrishnan J, Belmonte A, Witters T, Devulder W, Redolfi A, Kundu S, Houssa M, Kar GS. Goux L, et al. Among authors: kar gs. Faraday Discuss. 2019 Feb 18;213(0):67-85. doi: 10.1039/c8fd00115d. Faraday Discuss. 2019. PMID: 30346458

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